logo

FDC365P Datasheet, Fairchild Semiconductor

FDC365P mosfet equivalent, p-channel powertrench mosfet.

FDC365P Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 234.97KB)

FDC365P Datasheet

Features and benefits


* Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A
* Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
* RoHS Compliant November 2007 tm General Description This P-C.

Application

Applications
* Inverter
* Power Supplies S D D Pin 1 D D SuperSOTTM -6 G D1 D2 G3 6D 5D 4S MOSFET Maxim.

Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Applications
* Inverter <.

Image gallery

FDC365P Page 1 FDC365P Page 2 FDC365P Page 3

TAGS

FDC365P
P-Channel
PowerTrench
MOSFET
Fairchild Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts